Old Web
English
Sign In
Acemap
>
Paper
>
Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate
Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate
2002
Hidekazu Tsuchida
Takashi Tsuji
Hiroyuki Fujisawa
Isaho Kamata
Tamotsu Jikimoto
Shinji Ogino
Kunikazu Izumi
Keywords:
Schottky barrier
Electronic engineering
High voltage
Engineering
Metal–semiconductor junction
Epitaxy
Optoelectronics
Diode
Schottky diode
Growth rate
Fabrication
Correction
Source
Cite
Save
Machine Reading By IdeaReader
12
References
0
Citations
NaN
KQI
[]