LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

Abstract A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9–1.6 μm) and the long wavelength IR (LWIR) band (8–12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP).