Cmp abrasive and substrate polishing method

The present invention is an interlayer insulating film in a manufacturing process of a semiconductor device, in CMP (chemical mechanical polishing) technique to planarize the shallow trench isolation insulating film and the like allows polishing of efficient and fast. The present invention, cerium oxide particles, acetylene bond - CMP abrasive comprising an organic compound and water having (carbon triple bonds between carbon), and a polishing method of a substrate for polishing the film on the substrate by using the polishing agent it is.