Effect of gamma irradiation on the electrical conductivity of the layered compound GaS

Gamma irradiation of p-GaS at 300 K has been shown to produce both donors and acceptors. Their effect on the electrical properties of p-GaS depends on the gamma dose and the defect system in the unirradiated material. Low gamma doses (30–50 krad) reduce the hole concentration, which is due to the compensation of native acceptors by radiation-induced donors (sulfur interstitials). Studies of defect annealing in gamma-irradiated p-GaS at temperatures from 300 to 600 K indicate that this process occurs in three steps.