Ka-Band ultra low noise MMIC amplifier using pseudomorphic HEMTs

A Ka-band monolithic low noise two stage amplifier has been developed using an AlGaAs-InGaAs-GaAs pseudomorphic HEMTs with a gate length of 0.15 /spl mu/m. For a superior noise figure, the MMIC was optimized by inserting a low loss resonator type stabilizing circuit without sacrificing the gain performance. The amplifier has achieved a 1.0 dB noise figure with an associated gain of 18.0 dB at 32 GHz. These results are the best of AlGaAs-InGaAs-GaAs P-HEMT MMICs ever reported to date.