Epitaxial growth of fcc-CoxNi100−x thin films on MgO(110) single-crystal substrates

Co x Ni 100 − x ( x = 100 , 80, 20, 0 at. %) epitaxialthin films were prepared on MgO(110) single-crystal substrates heated at 300 ° C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystalfilms with a fcc structure are obtained for all compositions. Co x Ni 100 − x film growth follows the Volmer–Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100 − x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100 − x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co ( 110 ) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.