Dark current study for CMOS fully integrated-PIN-photodiodes
2011
PIN photodiodes are semiconductor devices widely used in a huge range of applications, such as photoconductors,
charge-coupled devices and pulse oximeters for medical applications. The possibility to combine and to integrate the
fabrication of the sensor with its signal conditioning circuitry in a CMOS process allows device miniaturization in
addition to enhance its properties lowering the production and assembly costs. This paper presents the design and
characterization of silicon based PIN photodiodes integrated in a CMOS commercial process. A high-resistivity, low
impurity substrate is chosen as the start material for the PIN photodiode array fabrication in order to fabricate devices
with a minimum dark current. The dark current is studied, analyzed and measured for two different starting materials and
for different geometries. A model previously proposed is reviewed and compared with experimental data.
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