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Electrical Properties of SiO 2 /GaN MOS Capacitors Fabricated on Mg-Implanted GaN Activated by Ultra-High-Pressure Annealing
Electrical Properties of SiO 2 /GaN MOS Capacitors Fabricated on Mg-Implanted GaN Activated by Ultra-High-Pressure Annealing
2021
Yuhei Wada
Hidetoshi Mizobata
Mikito Nozaki
Takuma Kobayashi
Takuji Hosoi
Hideki Sakurai
Tetsu Kachi
Akitaka Yoshigoe
Takayoshi Shimura
Heiji Watanabe
Keywords:
Annealing (metallurgy)
Materials science
Optoelectronics
ultra high pressure
Capacitor
Correction
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