Role of oxygen precipitates on the performance of crystalline silicon-based photovoltaic devices

Oxide precipitates (OPs) in Czochralski-grown silicon were investigated by Fourier transform infrared (FTIR) spectroscopy and ultra-high frequency photoconductive decay (UHFPCD). These data were compared with the photovoltaic properties of test diodes made on the same wafers. The results indicate a strong correlation between oxide precipitate concentration and the reduction of minority-carrier lifetime and diffusion length. The photovoltaic properties of the test diodes also degraded with the OP concentration.