Electric field controlled magnetization and transport properties of La0.7Ca0.3MnO3 ultrathin film

Abstract We have investigated the effect of electric field on the magnetization in La 0.7 Ca 0.3 MnO 3 (LCMO) ultrathin film (∼10 nm) by using it as the semiconductor channel material of a prototypical field effect device and SiO 2 as dielectric gate. The direct magnetization measurements confirm the formation of a large ferromagnetic phase with the increase in the negative applied gate voltage. We have also shown that a large electroresistance (ER) of ∼78% with V g  = −8 V can obtained in LCMO by using a dielectric gate by reducing the thickness of the LCMO channel.