Silicide synthesis by metal ion implantation and ion deposition

Silicides of cobalt with good properties were prepared using metal vapor vacuum arc (MEVVA) ion implantation. The epitaxial growth of Co silicide was observed by TEM. A continuous silicide layer with thickness of 80-200 nm was obtained. The sheet resistance of Co silicide decreases with increase of ion flux and ion dose. After annealing the sheet resistance decreases further. The phase transition from Co/sub 2/Si to CoSi/sub 2/ was observed when the ion flux and annealing temperature increased. Co (or Mo) silicide is synthesized using Co (or Mo) and Si ion alternant deposition. The coating quality is better than that of Co ion implantation. The power microwave transistors were fabricated using ion implantation, it shows that emitter resistance and noise of the transistor decrease markedly, the microwave property was improved obviously.