A method for producing a trench by using an epitaxial lateral over growth and deep vertical structure grave

In one aspect, a method of forming a trench in a semiconductor material, creating a first dielectric layer on a semiconductor substrate. The first dielectric layer containing first openings. On the semiconductor material is an epitaxial layer is grown by an epitaxial lateral monitoring process. The first openings are filled by the epitaxial layer and the epitaxial layer is grown on adjacent parts of the first dielectric layer such that a portion of the first dielectric layer is not covered by the epitaxial layer and extending over the portion of the first dielectric layer, the non- is covered with the epitaxial layer, forming a gap between opposing side walls of the epitaxial layer. The gap defines a first trench in the dielectric layer extending to the dielectric layer.