Antenna device reliability for ULSI processing

In this paper we assess gate oxide thickness (t/sub OX/) scaling issues with respect to key plasma processes-metal etch, contact etch and deposition, and relate the scaling trends to the mechanism of damage involved. We show that for electron shading effect, the damage effects peak for gate oxide around 30 /spl Aring/-40 /spl Aring/. We propose an antenna array scheme for plasma damage detection at small antenna ratios. We show that the local substrate potential can have a significant impact on device damage. Channel hot carrier (CHC) stress lifetime for antenna devices (both nMOSFET and pMOSFET) degrade with 2-10/spl times/ decrease in lifetime for 10/spl times/ increase in post-plasma stress Ig. Diode protection schemes are shown to be effective for 21 /spl Aring/-32 /spl Aring/ FETs.