Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy

We review the use of the contactless methods of photoreflectance (PR), contactless electroreflectance (CER) and wavelength modulated differential surface photovoltage spectroscopy (DSPS) for the nondestructive, room temperature characterization of a wide variety of wafer-scale III-V semiconductor device structures. Some systems that will be discussed include heterojunction bipolar transistors (including the determination of the built-in fields/doping levels in the emitter and collector regions, alloy composition, and dc current gain factor), pseudomorphic GaAlAs/InGaAs/GaAs high electron mobility transistors (including the determination of the composition, width, and two-dimensional electron gas density in the channel), InGaAsP/InP quantum well edge emitting lasers (including the detection of p-dopant interdiffusion), vertical-cavity surface-emitting lasers (determination of fundamental conduction to heavy-hole excitonic transition and cavity mode).