Thermal and Electromigration Effects on the Surface and Aluminum/Aluminum Oxide Interface of Aluminum Metallizations

Thermal and electromigration effects on the thicknesses of aluminum oxide at the aluminum-1% silicon/thermal silicon dioxide interface were quantitatively determined by AES. Void sites corresponded with thinner aluminum oxide thicknesses at this interface. Changes in surface topography and grain structure were quantitatively determined for thermally annealed aluminum-1% silicon metallizations by AFM.