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Acemap > Paper > 24pYF-10 a-Si(H)脱水素スペクトルの紫外光照射効果(格子欠陥・ナノ構造(半導体),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)

24pYF-10 a-Si(H)脱水素スペクトルの紫外光照射効果(格子欠陥・ナノ構造(半導体),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)

2008 
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