Graphoepitaxial and chemoepitaxial methods for creating line-space patterns at 33nm pitch: comparison to a HVM process

Block copolymer directed self-assembly (BCP-DSA) may provide a less costly method of forming sub-38nm pitch line-space patterns relative to proven HVM methods, but DSA needs to provide equivalent or improved defect density and pattern quality to warrant consideration for displacing current HVM methods. This paper evaluates the process constraints of three DSA flows and compares the pattern quality after pattern transfer for each flow at its optimal process conditions to the same pattern created by a proven HVM process flow.