led combo chip and manufacturing method thereof array structure

The present invention provides a combination of LED chip and a method for preparing an array structure, which includes a combination of chips are connected by wire array structure is a single core particles of several pieces of GaN-based LED chip; every one GaN-based LED from bottom to top chip comprising: wafer, an insulating spacer layer, a transparent conductive layer, a P-type and P-type electrode pads, N-type and N-type electrode pad and the passivation layer. The present invention is a conventional GaN-based light emitting diode and the IC circuit combining devices with integrated array of a plurality of conventional GaN-based LED chip units, consisting of a single chip unit core particles, the number of users of the package wire greatly reduced, reducing package difficulty. Further, the present invention is a combination of the chip to a small voltage high current driving manner, not only to alleviate the stress due to thermal mismatch and lattice mismatches, and due to the increase of the area of ​​the side walls to increase light extraction efficiency, thereby improving luminous efficiency.