Corrections to “Low-Voltage IGZO TFTs Using Solution-Deposited OTS-Modified Ta2O2 Dielectric”

Unfortunately, there are a few typographical errors in the above article. First, (4) is incomplete and the corrected formula is given here. Second, the unit of the interfacial trap density ( ${N}_{{\text {it}}}$ ) is corrected in three places. Third, the caption of Fig. 6 is corrected to accurately reflect the device structure. The corrections have no influence on the discussion and conclusions of the paper.