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Electron Microscopy Study of Localized Gate Forward Breakdown in AlGaN/AlN/GaN High Electron Mobility Transistors
Electron Microscopy Study of Localized Gate Forward Breakdown in AlGaN/AlN/GaN High Electron Mobility Transistors
2008
L Li
Noel T. Nuhfer
M. Skowronski
Keywords:
Electron mobility
Analytical chemistry
Induced high electron mobility transistor
Transistor
Materials science
High-electron-mobility transistor
Electron microscope
high electron
Optoelectronics
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