High-power single-mode laser diodes (λ = 1.1–1.2 μm) based on quantum-confined AlInGaAs/InP heterostructures

Quantum-confined AlInGaAs/InP laser heterostructures emitting at a wavelength of 1.18 μm have been grown by metalorganic vapor-phase epitaxy. An output radiation power of 40 mW in a single-mode CW regime has been obtained using a diode based in this structure with a mesastrip width of W = 4 μm. The total maximum CW emission power amounted to 75 mW.