Light-receiving element, a manufacturing method of the optical sensor device and a light receiving element

In MQW type 2, while improving the overall sensitivity, it is possible to prevent the drop of the sensitivity on the shorter wavelength side to provide a light receiving element or the like. It is formed on the III-V group compound semiconductor substrate 1, a pixel P, with a MQW light-receiving layer 3 of type 2 located on the substrate 1, MQW two different group III-V compound semiconductor layer 3a, 3b comprise more than 50 pairs as pairs of two different group III-V compound semiconductor layer constituting the pair, the thickness of the layer 3a of the more high potential of the valence band, film of the other layer 3b characterized in that it thinner than the thickness.