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IIB-6 shallow p + -n junction for CMOS VLSI application using germanium preamorphization
IIB-6 shallow p + -n junction for CMOS VLSI application using germanium preamorphization
1985
J. Liu
J.J. Wortman
R. B. Fair
Keywords:
Electronic engineering
Germanium
CMOS
Very-large-scale integration
p–n junction
Analytical chemistry
Physics
cmos vlsi
Optoelectronics
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