Etching characteristics of ArF and EUV resists in dual-frequency superimposed capacitively coupled CF₄/O₂/Ar and CF₄/CHF₃/O₂/Ar plasmas

In this study, the deformation and etch characteristics of ArF and EUV photoresists were compared in a dual frequency superimposed capacitively coupled plasma (DFS-CCP) etcher systems using CF₄/O₂/Ar and CF₄/CHF₃/O₂/Ar mixture gas chemistry which are typically used for BARC open and Si₃N₄ etching chemistry, respectively. Etch rate of the resists tend to increase with low-frequency source power (P LF ) and high-frequency source (f HF ). The etch rate of ArF resist was higher than that of EUV resist.