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Low dark current, mismatched InO.82GaO.18As/InAsyPl-y photodetectors for 2.5um wavelength, grown on InP by MOVPE.
Low dark current, mismatched InO.82GaO.18As/InAsyPl-y photodetectors for 2.5um wavelength, grown on InP by MOVPE.
1997
Mark D'Hondt
Ingrid Moerman
Peter Van Daele
Piet Demeester
Keywords:
Metalorganic vapour phase epitaxy
Dark current
Photodetector
Wavelength
Optoelectronics
Materials science
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