Opto-electric properties of Ti doping GZO thin film by different annealing temperatures

This study uses radio frequency magnetron sputtering (RF-sputtering) to deposit Ti: GZO transparent conductive film on the corning glass substrate, then treats Ti/GZO thin film with rapid thermal annealing (RTA) process. The annealing temperatures set as 300°C, 500°C and 550°C, respectively. Furthermore, the effects of process parameters on electrical resistivity and optical characteristic are examined. The deposited rate, microstructure, thickness and optical transmission of Ti:GZO thin film are investigated. The results show that the optical transmittance of Ti:GZO thin film exhibited an excellent transparency in the visible light field. Moreover, the resistivity of Ti:GZO decreases with increase in annealing temperature.