분자선에피택셜 방법으로 성장한 In0.53 Ga0.47 As/In0.52 Al0.48 As/InP P-HEMT구조내의 V 및 X 자형 결함에 관한 연구 ( A Study on the V and X shape defects in In0.53 Ga0.47 As/In0.52 Al0.48 As/InP P-HEMT structure grown by molecular beam epitaxy method )
1997
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