Growth of low resistivity and high transparency boron-doped zinc oxide film by pulse laser deposition

Abstract 0.5 wt% boron-doped zinc oxide (BZO) films were fabricated by utilizing pulse laser deposition under different growth temperature ranged from 250 °C to 450 °C. The effect of the growth temperature on the structural, optical, and electrical properties was investigated and discussed. The crystal structure and orientation of BZO thin films were examined by X-ray diffraction. All of the BZO films under various growth temperatures had strong c-axis (002)-preferred orientation. Optical transparency was high (>80%) over a wide spectral range from 400 nm to 700 nm, and the optical band gap value of BZO are found to be in the range from 3.18 to 3.47eV. According to the experimental data, the resistivity of the BZO film was optimized at ∼1.13 × 10−3 Ω-cm and significantly influenced by the growth temperature.