Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides

The edge field enhanced deep depletion phenomenon in metal-oxide-semiconductor (MOS) structure was demonstrated. The analysis in inversion to deep depletion of ultra-thin SiO 2 and HfO 2 was conducted using critical field model. By examine the field ratio between edge and bulk, it is observed that the HfO 2 has larger ratio than SiO 2 . It is supposed the edge field enhanced deep depletion phenomenon dominates both capacitance-voltage and current-voltage behavior.