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High-Speed Schottky-Barrier pMOSFET With $f_T = 280 hbox GHz$
High-Speed Schottky-Barrier pMOSFET With $f_T = 280 hbox GHz$
2004
M. Fritze
C L Chen
S. Calawa
D.-R. Yost
Bruce Wheeler
Peter W. Wyatt
Craig L. Keast
J Snyder
J. Larson
Keywords:
Chemistry
Schottky barrier
Optoelectronics
Analytical chemistry
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