Method of manufacturing a metal gate transistor, and transistor corresponding

Siliciding phase of the transistor includes forming from a first metal (8) of a first metal silicide (80) on the regions of source and drain while the gate region (30) is protected by a hard mask layer (40), removing the hard mask, the formation from a second metal (9) of a second metal silicide (90) on the gate region while the first silicide metal (80) is protected by the second metal (9), and removing the second metal (9).