Studies on the a-C:B films prepared by PLD using camphoric carbon target
2002
The boron (B) doped amorphous carbon (a-C:B) films have been grown by pulsed laser deposition (PLD) using camphoric carbon target at room temperature. The deposited films have been investigated using standard measurement techniques and the effects of B percentages by weight in the target (Bwt%) are discussed. The variation of structural properties, optical gap (E/sub g/) and electrical resistivity (/spl rho/) are related to successful doping of B for low content of B in the amorphous carbon (a-C) films as the structural and E/sub g/ remain almost unchanged, and the /spl rho/ decreased till for the film deposited at 10 Bwt%. Since both the E/sub g/ and /spl rho/ are decreased sharply with higher Bwt%, this phenomenon can be related due to the graphitization.
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