Performance Evaluation of In 0.53 Ga 0.47 As Esaki Tunnel Diodes on Silicon and InP Substrates

In 0.53 Ga 0.47 As Esaki tunnel diodes grown by molecular beam epitaxy on an Si substrate via a graded buffer and control In 0.53 Ga 0.47 As Esaki tunnel diodes grown on an InP substrate are compared in this paper. Statistics are used as a tool to show peak-to-valley ratio for the III–V on Si sample and the control that perform similarly below $8.6 \times 10^{-10}$ cm $^{2}$ . The existence of a critical device area suggests the potential to utilize III–V on Si for other deeply scaled tunnel devices.