A method for generating a three-dimensional integrated semiconductor device and three-dimensionally integrated semiconductor device

A method for generating a three-dimensional integrated semiconductor device, comprising: Providing a first device element (200), wherein the first device member (200) comprises: a first circuit element (206) which is at least partially formed in a first semiconductor film (203), wherein the first semiconductor film (203) as a semiconductor island surrounded by insulating material (201/202) is formed, a first contact region (208) and a first planar insulating layer (201) of dielectric material having a first free surface; Providing a second device element (100), wherein the second device member, a second circuit element (106) which is at least partially formed in a second semiconductor film (103) and a second planar insulating layer (101) of dielectric material, formed on the second semiconductor film ( 103), with a second free surface, comprising; wherein at least one of the first and second device members (100, 200) is produced by a method which comprises bonding a first semiconductor wafer having a second semiconductor wafer by means of a bonding method, wherein the surface of at least one semiconductor wafer oxidized ...