Method of growing gallium nitride crystal

According to the present invention, a method of growing a gallium nitride crystal, comprising the steps of: forming a mask (M) in the part on the base substrate (the U-), which inhibit the epitaxial growth of crystals; by vapor deposition, a mask is formed on top on the base substrate (U) membrane (M) epitaxial crystal growth, wherein the step of epitaxially growing the crystal, the crystal is grown under a first growth condition wherein a growth rate Vj in μm / h and expressed in units of absolute the growth temperature expressed in T is expressed as (a 1 / T + b 1 ) 2 / T + b 2 ), in which the coefficient a 1 = - 4.39 × 10 5 , b 1 = 3.87 × 10 2 , a 2 = - 7.36 × 10 5 and b 2 = 7.37 × 10 2 . In this way, the crystal dislocation density is reduced.