Normally off nitride high electron mobility transistor and method for manufacturing thereof

The present invention relates to a high electron mobility transistor and a method of manufacturing the same, more particularly, normally-off characteristics to locally prevent the formation of a 2DEG layer by forming a low Al content in the gate electrode lower part of the barrier layer (AlGaN) nitride based high electron mobility with the normally-off characteristics can be implemented also relates to a transistor and a method of manufacturing the same. Nitride based high electron mobility transistor and a manufacturing method having a normally-off characteristic of the present invention is formed on the upper substrate, the buffer layer comprising the 2DEG layer present discontinuously; The buffer layer is formed on a predetermined region of the upper, Al Wherein the buffer layer is formed on the upper first barrier layer is formed except the region, the second barrier layer made of Al The first barrier layer a gate electrode formed thereon; And it has the technical features as a source electrode and a drain electrode formed on both sides of the gate electrode. High electron mobility transistor (HEMT), a nitride-based, normally-off