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Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices
Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices
2014
Nicolas Gosset
Julien Ladroue
Thomas Tillocher
Philippe Lefaucheux
Mohamed Boufnichel
Remi Dussart
Keywords:
Power semiconductor device
Electronic engineering
Materials science
Engineering physics
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