Exposure of monomolecular resists with low energy electrons

Abstract Monomolecular resist films of tricosanoic and tricosanoic acid as well as polymethylmethacrylate (PMMA), prepared on thin Au and Pt films by the Langmuir-Blodgett (LB) technique have been exposed by electron-beams with an energy down to 2 keV. Below S keV, PMMA was found to act either as positive or negative resist, depending on the dose. Ultra low voltage beam ( ≤ 10 V) experiments with the scanning tunnelling microscope (STM) have not yet resulted in polymerization of the films. Pattern transfer into the Au films by wet or Ar ion etching has been demonstrated.