Investigations on the Influence of Masks on the Nature of Selective Area Epitaxy

Abstract We have evaluated the structural and optical properties of epitaxial layers of GaInAs and GaInAsP grown on InP substrates patterned with SiO 2 masks. The effect of the mask on the MOVPE grown material surrounding and underlying the mask, and the device performance from this material has been assessed in detail for the first time.