A Fully Coupled Computational Model of the Silylation Process

This report documents the development of a new finite element model of the positive tone silylation process. Model development makes use of pre-existing Sandia technology used to describe coupled thermal-mechanical behavior in deforming metals. Material properties and constitutive models were obtained from the literature. The model is two-dimensional and transient and focuses on the part of the lithography process in which crosslinked and uncrosslinked resist is exposed to a gaseous silylation agent. The model accounts for the combined effects of mass transport (diffusion of silylation agent and reaction product), chemical reaction resulting in the uptake of silicon and material swelling, the generation of stresses, and the resulting material motion. The influence of stress on diffusion and reaction rates is also included.