High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise

This paper presents a newly developed compact model of IGBT/IEGTs for prediction of power-loss and Electro-Magnetic-Interference (EMI) noise accurately. The proposed model focuses on the capacitance changes between each terminal during the switching operation and has two specific features, (1) the gate-emitter capacitance $\boldsymbol{C_{ge}}$ formed by non-linear functions which consider the negative capacitance for reproducing the turn-on $\mathbf{d}\boldsymbol{I}/ \mathbf{d}\boldsymbol{t}$ and (2) sub-circuits with ideal-diode and $\boldsymbol{CR}$ connected to the gate-collector and the collector-emitter for reproducing the turn-off $\mathbf{d}\boldsymbol{V}/\mathbf{d}\boldsymbol{t}$ and the tail current. Compared to the conventional model, it was concluded that the proposed model is able to reproduce the measured turn-on and turn-off switching waveform accurately with high convergence.