Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes

Abstract Indium aluminium antimonide (In 1− x Al x Sb) and cadmium mercury telluride (Cd x Hg 1− x Te) heterostructure diodes, which comprise a near intrinsic active region bounded by more highly doped contact regions, exhibit positive or negative luminescence at medium to long infrared wavelengths when forward or reverse biased respectively at room temperature. In reverse bias, the carrier densities in the near intrinsic region are reduced below their equilibrium values by the effects of exclusion and extraction. In consequence, the radiative recombination is reduced and the devices emit less infrared radiation than the thermal equilibrium value. The observed intensity of the negative luminescence is in general agreement with expected values.