Evaluation of Accelerator-based Secondary Ion Mass Spectrometry for the Ultra-trace Elemental Characterization of Bulk Silicon

Secondary ion mass spectrometry (SIMS), implemented using high efficiency ion extraction and transmission optics, compares favorably with other “standard” trace element analysis techniques such as spark source mass spectrometry or neutron activation analysis for bulk characterization of solid specimens. Typical SIMS detection limits range from 5 × 1016 atm-cm −3 (1 ppm) to 5 × 1013 atm-cm −3 (1 ppb). Detection limitations can arise, however, due to molecular ion interferences. Accelerator-based SIMS was developed to perform ultra-sensitive 14C analyses because molecular secondary ions can be dissociated into atomic fragments in the stripper canal of a tandem ion accelerator [1]. This paper will present an evaluation of AB/SIMS analysis of B, P, As, Sb and FeSi [2].