Impacts of high temperature annealing above 1400° C under N2 overpressure to activate acceptors in Mg-implanted GaN

In this study, we clarify the impact of annealing pressure and temperature of the ultra-high-pressure annealing (UHPA) as a post-implantation-annealing (PIA) on the acceptor activation for Mg-ions-implanted GaN samples. The pressure to prevent the thermal decomposition is absolutely determined by the equilibrium N 2 partial pressure in the phase diagram of GaN-Ga-N 2 system, so that the pressure below the critical pressure always leads to the serious surface decomposition of GaN. In low temperature cathodoluminescence examinations, the samples processed at 1400°C or above exhibited more intense emissions in the near band edge and donor-acceptor pair band with a suppression of green luminescence related to point defects. Temperature dependent Hall-effect measurement was allowed for the UHPA samples annealed at 1400°C or above, whereas free holes were not observed for the 1300°C-UHPA. Moreover, the acceptor concentrations (N a ) for samples annealed at 1400°C or above were close to Mg concentrations. We thus revealed the key process parameters in UHPA, which is at more than 1400°C under the N 2 overpressure exceeding the equilibrium partial pressure. These findings can play as a key role in the selective area doping using UHPA.