Method for detecting etching load effects

The invention discloses a method for detecting etching load effects. Such measurement structures as a dense groove structure, a sparse groove structure, a completely etched region and a completely non-etched region are pre-defined, and then the measurement parameters, such as critical size and membrane thickness, of each measurement structure are measured after etching by use of an optical line width measurer, and simple data processing is performed to obtain the load effects of the measurement parameters in the etching process. The method is capable of monitoring the change of the load effects of different products or etching machines in the etching process in real time and quickly detecting the abnormal conditions of the etching processes or machines; as a result, the stability of the etching processes can be maintained favorably; meanwhile, in the new product off-line or new process development process, the applicability of the etching process also can be quickly confirmed.