Time Dependence Study Of Hydrogen‐Induced Defects In Silicon During Thermal Anneals

Hydrogen implantation in silicon and subsequent thermal anneal result in the formation of a wide range of point and extended defects. In particular, characteristic two‐dimensional extended defects, i.e. platelets, are formed. The growth of these defects during thermal anneal, related to H migration, induces the development of micro‐cracks in Si. In this paper, a time dependence study of H defects during isothermal anneals is performed using SIMS, FTIR and TEM techniques. We calculate the kinetics of H2 formation based on SIMS depth profiling and FTIR measurements. We show that the splitting is determined by H migration and rearrangement of hydrogenated defects.