10 GHz-10 W Internally Matched Flip-Chip GaAs Power FETS
1980
The flip-chip GaAs power f.e.t. delivering 10 W power output with 3 dB gain has been realized at 10 GHz by using a newly developed internal matching technique, in which the f.e.t. chips are directly connected to the lumped dielectric capacitors prepared for the matching networks.
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