A 212 GHz millimeter wave source using optical mixing in high electron mobility transistors

D. Bhattacharya,M.E. Ali,Harold R. Fetterman,Mehran Matloubian,G. Bôll

A 212 GHz millimeter wave source using optical mixing in high electron mobility transistors

1998

D. Bhattacharya
M.E. Ali
Harold R. Fetterman
Mehran Matloubian
G. Bôll

We have demonstrated direct radiation of continuous wave signals optically generated in ultrafast HEMTs to 212 GHz and validated the use of this radiation for spectroscopic measurements.

Keywords:

Electron mobility
Optoelectronics
Ultrashort pulse
Physics
Continuous wave
Radiation
Transistor
Extremely high frequency
Optical transistor
High-electron-mobility transistor
direct radiation
high electron
Optics

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