Study of the recombination property in DH laser by the lasing delay method

In GaAs-Al/sub 0.3/Ga/sub 0.7/As DH lasers, an analysis of the recombination property by measurement of lasing delay is presented. It shows that only by considering both bimolecular radiative recombination and nonradiative recombination can we obtain a more comprehensive conclusion on lasing delay character. The method is proposed to determine the coefficient of radiative recombination and the lifetime of minority carriers.