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TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density
TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density
2020
Hitoshi Kunitake
Hajime Kimura
Kazuki Tsuda
Hiromichi Godo
Tsutomu Murakawa
Hiromi Sawai
Baba Haruyuki
Shinya Sasagawa
Takayuki Ikeda
Shunpei Yamazaki
Keywords:
Oxide
Optoelectronics
Materials science
NAND gate
Correction
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